Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field
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A theoretical prediction by de Gennes suggests that the resistance in a FI/S/FI (where FI is a ferromagnetic insulator, and S is a superconductor) structure will depend on the magnetization direction of the two FI layers. We report a magnetotransport measurement in a EuS/Al/EuS structure, showing that an infinite magnetoresistance can be produced by tuning the internal exchange field at the FI/S interface. This proximity effect at the interface can be suppressed by an Al[subscript 2]O[subscript 3] barrier as thin as 0.3 nm, showing the extreme confinement of the interaction to the interface giving rise to the demonstrated phenomena.
Date issued
2013-02Department
Massachusetts Institute of Technology. Department of Physics; Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)Journal
Physical Review Letters
Publisher
American Physical Society
Citation
Li, Bin, Niklas Roschewsky, Badih A. Assaf, et al. Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field. Physical Review Letters 110(9), 2013. © 2013 American Physical Society
Version: Final published version
ISSN
0031-9007
1079-7114