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BN/Graphene/BN Transistors for RF Applications

dc.contributor.authorTaychatanapat, Thiti
dc.contributor.authorWang, Han
dc.contributor.authorHsu, Allen Long
dc.contributor.authorWatanabe, Kenji
dc.contributor.authorTaniguchi, Takashi
dc.contributor.authorJarillo-Herrero, Pablo
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2012-10-16T13:03:07Z
dc.date.available2012-10-16T13:03:07Z
dc.date.issued2011-08
dc.date.submitted2011-06
dc.identifier.issn0741-3106
dc.identifier.urihttp://hdl.handle.net/1721.1/74004
dc.description.abstractIn this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.en_US
dc.description.sponsorshipUnited States. Office of Naval Research (GATE MURI)en_US
dc.description.sponsorshipU.S. Army Research Laboratoryen_US
dc.description.sponsorshipNational Science Foundation (U.S.) (CAREER grant 0845287)en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/ 10.1109/LED.2011.2160611en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alike 3.0en_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/en_US
dc.sourceProf. Jarillo-Herrero via Mat Willmotten_US
dc.titleBN/Graphene/BN Transistors for RF Applicationsen_US
dc.typeArticleen_US
dc.identifier.citationWang, Han et al. “BN/Graphene/BN Transistors for RF Applications.” IEEE Electron Device Letters 32.9 (2011): 1209-1211.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.approverJarillo-Herrero, Pablo
dc.contributor.mitauthorTaychatanapat, Thiti
dc.contributor.mitauthorWang, Han
dc.contributor.mitauthorHsu, Allen Long
dc.contributor.mitauthorJarillo-Herrero, Pablo
dc.contributor.mitauthorPalacios, Tomas
dc.relation.journalIEEE Electron Device Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsWang, Han; Taychatanapat, Thiti; Hsu, Allen; Watanabe, Kenji; Taniguchi, Takashi; Jarillo-Herrero, Pablo; Palacios, Tomasen
dc.identifier.orcidhttps://orcid.org/0000-0002-2190-563X
dc.identifier.orcidhttps://orcid.org/0000-0001-8217-8213
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


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