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dc.contributor.authorLu, Yongli
dc.contributor.authorShih, Meng‐Chen
dc.contributor.authorTan, Shaun
dc.contributor.authorGrotevent, Matthias J
dc.contributor.authorWang, Lili
dc.contributor.authorZhu, Hua
dc.contributor.authorZhang, Ruiqi
dc.contributor.authorLee, Joo‐Hong
dc.contributor.authorLee, Jin‐Wook
dc.contributor.authorBulović, Vladimir
dc.contributor.authorBawendi, Moungi G
dc.date.accessioned2026-03-03T19:58:49Z
dc.date.available2026-03-03T19:58:49Z
dc.date.issued2023-07-18
dc.identifier.urihttps://hdl.handle.net/1721.1/164997
dc.description.abstractChemical bath deposition (CBD) is widely used to deposit tin oxide (SnOx) as an electron-transport layer in perovskite solar cells (PSCs). The conventional recipe uses thioglycolic acid (TGA) to facilitate attachments of SnOx particles onto the substrate. However, nonvolatile TGA is reported to harm the operational stability of PSCs. In this work, a volatile oxalic acid (OA) is introduced as an alternative to TGA. OA, a dicarboxylic acid, functions as a chemical linker for the nucleation and attachment of particles to the substrate in the chemical bath. Moreover, OA can be readily removed through thermal annealing followed by a mild H2O2 treatment, as shown by FTIR measurements. Synergistically, the mild H2O2 treatment selectively oxidizes the surface of the SnOx layer, minimizing nonradiative interface carrier recombination. EELS (electron-energy-loss spectroscopy) confirms that the SnOx surface is dominated by Sn4+, while the bulk is a mixture of Sn2+ and Sn4+. This rational design of a CBD SnOx layer leads to devices with T85 ≈1500 h, a significant improvement over the TGA-based device with T80 ≈250 h. The champion device reached a power conversion efficiency of 24.6%. This work offers a rationale for optimizing the complex parameter space of CBD SnOx to achieve efficient and stable PSCs.en_US
dc.language.isoen
dc.publisherWileyen_US
dc.relation.isversionof10.1002/adma.202304168en_US
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivativesen_US
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en_US
dc.sourceWileyen_US
dc.titleRational Design of a Chemical Bath Deposition Based Tin Oxide Electron‐Transport Layer for Perovskite Photovoltaicsen_US
dc.typeArticleen_US
dc.identifier.citationLu, Yongli, Shih, Meng‐Chen, Tan, Shaun, Grotevent, Matthias J, Wang, Lili et al. 2023. "Rational Design of a Chemical Bath Deposition Based Tin Oxide Electron‐Transport Layer for Perovskite Photovoltaics." Advanced Materials, 35 (45).
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemistryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.relation.journalAdvanced Materialsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2026-03-03T19:54:04Z
dspace.orderedauthorsLu, Y; Shih, M; Tan, S; Grotevent, MJ; Wang, L; Zhu, H; Zhang, R; Lee, J; Lee, J; Bulović, V; Bawendi, MGen_US
dspace.date.submission2026-03-03T19:54:06Z
mit.journal.volume35en_US
mit.journal.issue45en_US
mit.licensePUBLISHER_CC
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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