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Deposition and characterization of very low pressure CVD silicon/silicon-germanium heteroepitaxial structures

dc.contributor.authorTsai, Curtis.en_US
dc.date.accessioned2026-02-02T19:10:31Z
dc.date.available2026-02-02T19:10:31Z
dc.date.copyright1992en_US
dc.date.issued1992en_US
dc.identifier.urihttps://hdl.handle.net/1721.1/164703
dc.descriptionThesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1992en_US
dc.descriptionIncludes bibliographical references (leaves 135-146).en_US
dc.description.statementofresponsibilityby Curtis Tsai.en_US
dc.format.extent146 p.en_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsMIT theses may be protected by copyright. Please reuse MIT thesis content according to the MIT Libraries Permissions Policy, which is available through the URL provided.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectElectrical Engineering and Computer Scienceen_US
dc.titleDeposition and characterization of very low pressure CVD silicon/silicon-germanium heteroepitaxial structuresen_US
dc.typeThesisen_US
dc.description.degreePh. D.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.identifier.oclc27782062en_US
dc.description.collectionPh. D. Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Scienceen_US
dspace.imported2026-02-02T19:10:31Zen_US
mit.thesis.degreeDoctoralen_US


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