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Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

dc.contributor.authorYuan, Mengyang
dc.contributor.authorNiroula, John
dc.contributor.authorXie, Qingyun
dc.contributor.authorRajput, Nitul S.
dc.contributor.authorFu, Kai
dc.contributor.authorLuo, Shisong
dc.contributor.authorDas, Sagar Kumar
dc.contributor.authorIqbal, Abdullah Jubair Bin
dc.contributor.authorSikder, Bejoy
dc.contributor.authorIsamotu, Mohamed Fadil
dc.contributor.authorOh, Minsik
dc.contributor.authorEisner, Savannah R.
dc.contributor.authorSenesky, Debbie G.
dc.contributor.authorHunter, Gary W.
dc.contributor.authorChowdhury, Nadim
dc.contributor.authorZhao, Yuji
dc.contributor.authorPalacios, Tomás
dc.date.accessioned2023-08-21T22:39:09Z
dc.date.available2023-08-21T22:39:09Z
dc.date.issued2023-07
dc.identifier.issn0741-3106
dc.identifier.issn1558-0563
dc.identifier.urihttps://hdl.handle.net/1721.1/151793
dc.description.sponsorshipNational Aeronautics and Space Administration (NASA)en_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionof10.1109/led.2023.3279813en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttps://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceXieen_US
dc.subjectElectrical and Electronic Engineeringen_US
dc.subjectElectronic, Optical and Magnetic Materialsen_US
dc.titleEnhancement-Mode GaN Transistor Technology for Harsh Environment Operationen_US
dc.typeArticleen_US
dc.identifier.citationYuan, Mengyang, Niroula, John, Xie, Qingyun, Rajput, Nitul S., Fu, Kai et al. 2023. "Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation." IEEE Electron Device Letters, 44 (7).
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratories
dc.relation.journalIEEE Electron Device Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.identifier.doi10.1109/LED.2023.3279813
dspace.date.submission2023-08-10T14:53:28Z
mit.journal.volume44en_US
mit.journal.issue7en_US
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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