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Serially connected monolayer MoS FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithography

dc.contributor.authorNourbakhsh, Amirhasan
dc.contributor.authorZubair, Ahmad
dc.contributor.authorTavakkoli Kermani Ghariehali, Amir
dc.contributor.authorSajjad, Redwan Noor
dc.contributor.authorLing, Xi
dc.contributor.authorDresselhaus, Mildred
dc.contributor.authorKong, Jing
dc.contributor.authorBerggren, Karl K
dc.contributor.authorAntoniadis, Dimitri A
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2017-07-18T14:16:50Z
dc.date.available2017-07-18T14:16:50Z
dc.date.issued2016-09
dc.date.submitted2016-06
dc.identifier.isbn978-1-5090-0638-0
dc.identifier.urihttp://hdl.handle.net/1721.1/110749
dc.description.abstractWe demonstrate sub-10 nm transistor channel lengths by directed self-assembly patterning of monolayer MoS[subscript 2] in a periodic chain of homojunction semiconducting-(2H) and metallic-phase (1T') MoS[subscript 2] regions with half-pitch of 7.5 nm. The MoS[subscript 2] composite transistor possesses an off-state current of 100 pA/μm and an I[subscript on]/I[subscript off] ratio in excess of 10[subscript 5]. Modeling of the resulting current-voltage characteristics reveals that the 2H/1T' MoS[subscript 2] homojunction has a resistance of 75 Ω.μm while the 2H-MoS[subscript 2] exhibits low-field mobility of ~8 cm[superscript 2]/V.s and carrier injection velocity of ~10[superscript 6] cm/s.en_US
dc.description.sponsorshipUnited States. Office of Naval Research. Presidential Early Career Award for Scientists and Engineersen_US
dc.description.sponsorshipNational Science Foundation (U.S.). Nano-Engineered Electronic Device Simulationen_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/VLSIT.2016.7573376en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceOther repositoryen_US
dc.titleSerially connected monolayer MoS FETs with channel patterned by a 7.5 nm resolution directed self-assembly lithographyen_US
dc.typeArticleen_US
dc.identifier.citationNourbakhsh, A. et al. “Serially Connected Monolayer MoS2 FETs with Channel Patterned by a 7.5 Nm Resolution Directed Self-Assembly Lithography.” 2016 IEEE Symposium on VLSI Technology, Honolulu, HI, USA, 14-16 June, 2016. IEEE, 2016. 1–2.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.departmentMassachusetts Institute of Technology. Plasma Science and Fusion Centeren_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorNourbakhsh, Amirhasan
dc.contributor.mitauthorZubair, Ahmad
dc.contributor.mitauthorTavakkoli Kermani Ghariehali, Amir
dc.contributor.mitauthorSajjad, Redwan Noor
dc.contributor.mitauthorLing, Xi
dc.contributor.mitauthorDresselhaus, Mildred
dc.contributor.mitauthorKong, Jing
dc.contributor.mitauthorBerggren, Karl K
dc.contributor.mitauthorAntoniadis, Dimitri A
dc.contributor.mitauthorPalacios, Tomas
dc.relation.journal2016 IEEE Symposium on VLSI Technologyen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dspace.orderedauthorsNourbakhsh, A.; Zubair, A.; Tavakkoli, A.; Sajjad, R.; Ling, X.; Dresselhaus, M.; Kong, J.; Berggren, K. K.; Antoniadis, D.; Palacios, T.en_US
dspace.embargo.termsNen_US
dc.identifier.orcidhttps://orcid.org/0000-0001-6162-1749
dc.identifier.orcidhttps://orcid.org/0000-0001-9827-3557
dc.identifier.orcidhttps://orcid.org/0000-0002-9498-7808
dc.identifier.orcidhttps://orcid.org/0000-0001-8385-0438
dc.identifier.orcidhttps://orcid.org/0000-0002-1955-3081
dc.identifier.orcidhttps://orcid.org/0000-0001-8492-2261
dc.identifier.orcidhttps://orcid.org/0000-0003-0551-1208
dc.identifier.orcidhttps://orcid.org/0000-0001-7453-9031
dc.identifier.orcidhttps://orcid.org/0000-0002-4836-6525
dc.identifier.orcidhttps://orcid.org/0000-0002-2190-563X
mit.licenseOPEN_ACCESS_POLICYen_US


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