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dc.contributor.advisorTerry P. Orlando and Simon Gustavsson.en_US
dc.contributor.authorBader, Samuel Jamesen_US
dc.contributor.otherMassachusetts Institute of Technology. Department of Physics.en_US
dc.date.accessioned2015-01-05T20:07:25Z
dc.date.available2015-01-05T20:07:25Z
dc.date.copyright2014en_US
dc.date.issued2014en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/92701
dc.descriptionThesis: S.B., Massachusetts Institute of Technology, Department of Physics, 2014.en_US
dc.descriptionCataloged from PDF version of thesis.en_US
dc.descriptionIncludes bibliographical references (pages 91-95).en_US
dc.description.abstractThis thesis discusses recent experimental work in measuring the properties of higher levels in transmon qubit systems. The first part includes a thorough overview of transmon devices, explaining the principles of the device design, the transmon Hamiltonian, and general Circuit Quantum Electrodynamics concepts and methodology. The second part discusses the experimental setup and methods employed in measuring the higher levels of these systems, and the details of the simulation used to explain and predict the properties of these levels.en_US
dc.description.statementofresponsibilityby Samuel James Bader.en_US
dc.format.extent95 pagesen_US
dc.language.isoengen_US
dc.publisherMassachusetts Institute of Technologyen_US
dc.rightsM.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission.en_US
dc.rights.urihttp://dspace.mit.edu/handle/1721.1/7582en_US
dc.subjectPhysics.en_US
dc.titleHigher levels of the transmon qubiten_US
dc.typeThesisen_US
dc.description.degreeS.B.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physics
dc.identifier.oclc898334148en_US


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