Browsing MIT Theses by Author "Saadat, Omair I"

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    • Processing technology for high quality AlGaN/GaN MOSHEMT interfaces 

      Saadat, Omair I (Massachusetts Institute of Technology, 2015)
      Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) are very promising for applications requiring high power and high operating frequencies due to its intrinsic material properties like the high electron ...

    • Self-aligned AlGaN/GaN transistors for sub-mm wave applications 

      Saadat, Omair I (Massachusetts Institute of Technology, 2010)
      This thesis describes work done towards realizing self-aligned AlGaN/GaN high electron mobility transistors (HEMTs). Self-aligned transistors are important for improving the frequency of AlGaN/GaN HEMTs by reducing source ...