Singapore-MIT Alliance (SMA): Recent submissions

Now showing items 202-204 of 554

    • Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering 

      Kan, Eric Win Hong; Koh, B.H.; Choi, Wee Kiong; Chim, Wai Kin; Antoniadis, Dimitri A.; e.a. (2005-01)
      Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...

    • High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching 

      Vajpeyi, Agam P.; Chua, Soo-Jin; Tripathy, S.; Fitzgerald, Eugene A. (2005-01)
      Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman ...

    • High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD 

      Hartono, Haryono; Chua, Soo-Jin; Fitzgerald, Eugene A.; Song, T.L.; Chen, Peng (2005-01)
      The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ...