Now showing items 199-201 of 554

    • Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits 

      Leong, Hoi Liong; Gan, C.L.; Pey, Kin Leong; Tsang, Chi-fo; Thompson, Carl V.; e.a. (2005-01)
      Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures ...
    • Poly-Si₁â‚‹xGex Film Growth for Ni Germanosilicided Metal Gate 

      Yu, Hongpeng; Pey, Kin Leong; Choi, Wee Kiong; Fitzgerald, Eugene A.; Antoniadis, Dimitri A. (2005-01)
      Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 ...
    • Oblique Angle Deposition of Germanium Film on Silicon Substrate 

      Chew, Han Guan; Choi, Wee Kiong; Chim, Wai Kin; Fitzgerald, Eugene A. (2005-01)
      The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal ...