Singapore-MIT Alliance (SMA): Recent submissions
Now showing items 199-201 of 554
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Preliminary Characterisation of Low-Temperature Bonded Copper Interconnects for 3-D Integrated Circuits
(2005-01)Three dimensional (3-D) integrated circuits can be fabricated by bonding previously processed device layers using metal-metal bonds that also serve as layer-to-layer interconnects. Bonded copper interconnects test structures ... -
Poly-Si₁âxGex Film Growth for Ni Germanosilicided Metal Gate
(2005-01)Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 ... -
Oblique Angle Deposition of Germanium Film on Silicon Substrate
(2005-01)The effect of flux angle, substrate temperature and deposition rate on obliquely deposited germanium (Ge) films has been investigated. By carrying out deposition with the vapor flux inclined at 87° to the substrate normal ...


