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Compound Semiconductor Materials and Devices

dc.contributor.authorFonstad, Clifton J., Jr.en_US
dc.contributor.authorAhadian, Joseph F.en_US
dc.contributor.authorRoyter, Yakoven_US
dc.contributor.authorPatterson, Steven G.en_US
dc.contributor.authorWang, Haoen_US
dc.contributor.authorViadyananthan, Praveen T.en_US
dc.contributor.authorMartin, Paul S.en_US
dc.contributor.authorAggarwal, Rajni J.en_US
dc.contributor.authorPetrich, Gale S.en_US
dc.contributor.authorKolodziejski, Leslie A.en_US
dc.contributor.authorMikkelson, James M.en_US
dc.contributor.authorGoodhue, William D.en_US
dc.contributor.authorFitzgerald, Eugene A.en_US
dc.contributor.authorBulsara, Mayank T.en_US
dc.contributor.authorHoshino, Isakoen_US
dc.contributor.authorTachikawa, Masamien_US
dc.contributor.authorChoy, Henry K.en_US
dc.contributor.authorRam, Rachna J.en_US
dc.contributor.authorLivas, Jeffrey C.en_US
dc.contributor.authorHall, Katherine L.en_US
dc.contributor.authorPrasad, Sheilaen_US
dc.contributor.authorShenoy, Krishna V.en_US
dc.contributor.authorWarde, Cardinalen_US
dc.contributor.authorLuo, Jiafuen_US
dc.contributor.authorPsaltis, Demetrien_US
dc.contributor.authorPan, Janet L.en_US
dc.contributor.authorCrankshaw, Donald S.en_US
dc.contributor.authorKannam, P.en_US
dc.contributor.authorMartin, R. J.en_US
dc.date.accessioned2010-07-17T01:11:26Z
dc.date.available2010-07-17T01:11:26Z
dc.date.issued1996-01-01 to 1996-12-31en_US
dc.identifierRLE_PR_139_01_01s_01en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57392
dc.descriptionContains table of contents for Part I, table of contents for Section 1, an introduction, reports on fourteen research projects and a list of publications.en_US
dc.description.sponsorshipDefense Advanced Research Projects Agency/National Center for Integrated Photonics Technologyen_US
dc.description.sponsorshipJoint Services Electronics Program Grant DAAH04-95-1-0038en_US
dc.description.sponsorshipMIT Lincoln Laboratoryen_US
dc.description.sponsorshipNational Science Foundation Graduate Fellowshipen_US
dc.description.sponsorshipU.S. Navy - Office of Naval Researchen_US
dc.description.sponsorshipAT&T Bell Laboratories Fellowshipen_US
dc.description.sponsorshipU.S. Army - Ft. Meadeen_US
dc.description.sponsorshipNTT Corporationen_US
dc.description.sponsorshipNational Science Foundationen_US
dc.description.sponsorshipLockheed-Martin Corporationen_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1996en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofCompound Semiconductor Materials and Devicesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 139en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherCompound Semiconductor Materialsen_US
dc.subject.otherCompound Semiconductor Devicesen_US
dc.subject.otherEpitaxy-on-Electronics Integration Technologyen_US
dc.subject.otherMonolithic Enhancement of MESFET Electronics with Resonant Tunneling Diodesen_US
dc.subject.otherHyperthermal Molecular Beam Dry Etching of III-V Compound Semiconductorsen_US
dc.subject.otherInGaAsP/GaAs Light Emitting Diodes Monolithically Integrated on GaAs VLSI Electronicsen_US
dc.subject.otherThe OPTOCHIP Projecten_US
dc.subject.otherOther Multi-group OEIC Chipsen_US
dc.subject.otherMonolithic Integration of Vertical-Cavity Surface-Emitting Laser Diodes on GaAs VLSI Electronicsen_US
dc.subject.otherMonolithic Integration of In-Plane, Surface-Emitting Laser Diodes on GaAs VLSI Electronicsen_US
dc.subject.otherMetal-Semiconductor-Metal Photodetectors from a GaAs VLSI Processen_US
dc.subject.otherMonolithic Integration of 1550 nm Photodetectors on GaAs Transimpedance Amplifier Chipsen_US
dc.subject.otherMicrowave Characterization of Optoelectronic Devicesen_US
dc.subject.otherReduced-Temperature Growth of Distributed Bragg Relectors of Self-Electrooptic-Effect Devices on GaAs on GaAs VLSI Electronicsen_US
dc.subject.otherReduced-Temperature Growth of Monolithic Integration of Self-Electrooptic-Effect Devices on GaAs on GaAs VLSI Electronicsen_US
dc.subject.otherCompact Integrated Optics Structures for Monolithic Integrationen_US
dc.subject.otherIntegrated Normal Incidence Single-Band Quantum-Well Intersubband Photodetectorsen_US
dc.subject.otherIntegrated Normal Incidence Dual-Band Quantum-Well Intersubband Photodetectorsen_US
dc.subject.otherFigures of Merit for Quantum-Well Intersubband Photodetector Focal-Plane Arrays in Different Operating Regimesen_US
dc.titleCompound Semiconductor Materials and Devicesen_US
dc.typeTechnical Reporten_US


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