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Heterostructures for High Performance Devices

dc.contributor.authorFonstad, Clifton J., Jr.en_US
dc.contributor.authorVlcek, James C.en_US
dc.contributor.authorSinger, Richard A.en_US
dc.contributor.authorBurns, Geoffrey F.en_US
dc.contributor.authorBlanck, Herveen_US
dc.contributor.authorShenoy, Krishna V.en_US
dc.contributor.authorMikkelson, Jamesen_US
dc.contributor.authorChoi, Woo-Youngen_US
dc.contributor.authorRoyter, Yakoven_US
dc.contributor.authorMartin, Paul S.en_US
dc.contributor.authorHaus, Hermann A.en_US
dc.contributor.authorKuo, Tanni Y.en_US
dc.contributor.authorCunningham, Jacken_US
dc.contributor.authorPrasad, Sheilaen_US
dc.contributor.authorMeskoob, Bahmanen_US
dc.contributor.authorKim, Michaelen_US
dc.contributor.authorBroekaert, Thomas P. E.en_US
dc.contributor.authorSmet, Jurgenen_US
dc.contributor.authorPeng, Lung-Hanen_US
dc.contributor.authorJones, R. Victoren_US
dc.contributor.authorEhrenrich, Victoren_US
dc.contributor.authorHoshino, Isakoen_US
dc.contributor.authorCeyer, Sylvia T.en_US
dc.contributor.authorSawin, Herbert H.en_US
dc.date.accessioned2010-07-16T04:21:47Z
dc.date.available2010-07-16T04:21:47Z
dc.date.issued1990-01-01 to 1990-12-31en_US
dc.identifierRLE_PR_133_01_01s_09en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57158
dc.descriptionContains an introduction, reports on thirteen research projects and a list of publications.en_US
dc.description.sponsorshipCharles S. Draper Laboratory Contract DL-H-418483en_US
dc.description.sponsorshipDARPA/NCIPT Subcontract 542383en_US
dc.description.sponsorshipJoint Services Electronics Program Contract DAAL03-89-C-0001en_US
dc.description.sponsorshipIBM Corporation Fellowshipen_US
dc.description.sponsorshipNational Science Foundation Fellowshipen_US
dc.description.sponsorshipVitesse Semiconductoren_US
dc.description.sponsorshipAT&T Bell Laboratoriesen_US
dc.description.sponsorshipHertz Foundation Fellowshipen_US
dc.description.sponsorshipNational Science Foundationen_US
dc.description.sponsorshipTRWen_US
dc.description.sponsorshipBelgian American Education Foundation (BAEF) Fellowshipen_US
dc.description.sponsorshipNational Science Foundation Grant ECS 90-08485en_US
dc.description.sponsorshipHarvard University. Division of Applied Physicsen_US
dc.description.sponsorshipAT&T Bell Laboratories Fellowshipen_US
dc.description.sponsorshipNational Science Foundation Grant ECS 90-07745en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1990en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofHeterostructures for High Performance Devicesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 133en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherHeterostructures for High Performance Devicesen_US
dc.subject.otherComputer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InPen_US
dc.subject.otherInGaAIAs Strained-Layer Heterostructures on 111 GaAs for Optoelectronic Device Applicationsen_US
dc.subject.otherInGaAIAs Strained-Layer Heterostructures on InP for Optoelectronic Device Applicationsen_US
dc.subject.otherMolecular Beam Epitaxy of GaAIAs Laser Diode Heterostructures on Silicon Substratesen_US
dc.subject.otherIntegration of Vertical Cavity Surface Emitting Lasers on GaAs Integrated Circuitsen_US
dc.subject.otherMBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applicationsen_US
dc.subject.otherApplications for New Three Terminal Laser Diodes with Dynamic Control of Gain Indexen_US
dc.subject.otherApplications for New Three Terminal Laser Diodes with Dynamic Control of Refractive Indexen_US
dc.subject.otherUse of Graded Profiles to Improve InGaAIAs/InP Heterojunction Bipolar Transistor Performanceen_US
dc.subject.otherApplications of Delta-Doping to Heterojunction Bipolar Transistorsen_US
dc.subject.otherMicrowave Characterization of Emitter-Down Heterojunction Bipolar Transistorsen_US
dc.subject.otherMicrowave Analysis of Emitter-Down Heterojunction Bipolar Transistorsen_US
dc.subject.otherMicrowave Modeling of Emitter-Down Heterojunction Bipolar Transistorsen_US
dc.subject.otherAlAs Etch-Stop Layers for InGaAIAs/InP Heterostructure Devicesen_US
dc.subject.otherAlAs Etch-Stop Layers for InGaAIAs/InP Heterostructure Circuitsen_US
dc.subject.otherThree-Terminal n-n-n Quantum-Well-Base, Tunnel-Barrier Devicesen_US
dc.subject.otherSelf-Consistent Modeling of Biased Quantum-Well-Base, Tunnel-Barrier Structuresen_US
dc.subject.otherInfrared Characterization of InGaAs/AIAs/InP Quantum Well Heterostructuresen_US
dc.subject.otherDamage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beamsen_US
dc.subject.otherDamage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beamsen_US
dc.subject.otherPublicationsen_US
dc.titleHeterostructures for High Performance Devicesen_US
dc.typeTechnical Reporten_US


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