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Submicron Structures Technology and Research

dc.contributor.authorSmith, Henry I.en_US
dc.contributor.authorBurkhardt, Martinen_US
dc.contributor.authorCarter, James M.en_US
dc.contributor.authorChu, Williamen_US
dc.contributor.authorEarly, Kathleen R.en_US
dc.contributor.authorGhanbari, Reza A.en_US
dc.contributor.authorKu, Yao-Chingen_US
dc.contributor.authorMoel, Albertoen_US
dc.contributor.authorQuek, Hui Mengen_US
dc.contributor.authorSchattenburg, Mark L.en_US
dc.contributor.authorThe, Siang-Chunen_US
dc.contributor.authorYen, Anthony T.en_US
dc.contributor.authorLu, Kenneth P.en_US
dc.contributor.authorSu, Lisa T-F.en_US
dc.contributor.authorGutierrez, JoAnne M.en_US
dc.contributor.authorTsai, Flora S.en_US
dc.contributor.authorAntoniadis, Dimitri A.en_US
dc.contributor.authorCarlin, Gregory A.en_US
dc.contributor.authorMeyer, Paul G.en_US
dc.contributor.authorShahidi, Ghavam G.en_US
dc.contributor.authorField, Stuart B.en_US
dc.contributor.authorKastner, Marc A.en_US
dc.contributor.authorMeirav, Udien_US
dc.contributor.authorPark, Samuel L.en_US
dc.contributor.authorScott-Thomas, John H. F.en_US
dc.contributor.authorBagwell, Phillip F.en_US
dc.contributor.authorOrlando, Terry P.en_US
dc.contributor.authordel Alamo, Jesus A.en_US
dc.contributor.authorIsmail, Khaliden_US
dc.contributor.authorLiu, C. T.en_US
dc.contributor.authorSmith, T. P.en_US
dc.contributor.authorTsui, Danielen_US
dc.contributor.authorCanizares, Claude R.en_US
dc.contributor.authorFloro, Jerold A.en_US
dc.contributor.authorThompson, Carl V.en_US
dc.date.accessioned2010-07-16T04:11:22Z
dc.date.available2010-07-16T04:11:22Z
dc.date.issued1989-01-01 to 1989-12-31en_US
dc.identifierRLE_PR_132_01_01s_01en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57116
dc.descriptionContains table of contents for Part I, table of contents for Section 1 and reports on thirteen research projects.en_US
dc.description.sponsorshipJoint Services Electronics Program Contract DAAL03-89-C-0001en_US
dc.description.sponsorshipNational Science Foundation Grant ECS 87-09806en_US
dc.description.sponsorshipSemiconductor Research Corporation Contract 87-SP-080en_US
dc.description.sponsorshipHampshire Instruments Corporationen_US
dc.description.sponsorshipNational Science Foundation Grant ECS-85-03443en_US
dc.description.sponsorshipU.S. Air Force - Office of Scientific Research Grant AFOSR-88-0304en_US
dc.description.sponsorshipU.S. Air Force - Office of Scientific Research Grant AFOSR-85-0154en_US
dc.description.sponsorshipX-Opt., Incorporateden_US
dc.description.sponsorshipNational Aeronautics and Space Administration Contract NAS8-36748en_US
dc.description.sponsorshipAT&T Bell Laboratoriesen_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofSubmicron Structures Technology and Researchen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherSubmicron Structures Technologyen_US
dc.subject.otherSubmicron Structures Researchen_US
dc.subject.otherSubmicron Structures Laboratoryen_US
dc.subject.otherMicrofabrication at Linewidths of 100nm and Belowen_US
dc.subject.otherImproved Mask Technology For X-Ray Lithographyen_US
dc.subject.otherElectron Transport in Si MOSFETs with Deep-Submicron Channel Lengthsen_US
dc.subject.otherElectronic Conduction in One-Dimensional Semiconductor Devicesen_US
dc.subject.otherSurface Superlattice Formation in Silicon Inversion Layers Using 0.2 μm-Period Grating-Gate Field-Effect Transistorsen_US
dc.subject.otherSurface Superlattice Formation in GaAs/GaAIAs Modulation Doped Field-Effect Transistorsen_US
dc.subject.otherOne-Dimensional Subbands in GaAs/AIGaAs Quantum Wiresen_US
dc.subject.otherMobility Modulation in GaAs/AIGaAs Quantum Wiresen_US
dc.subject.otherArrays of Field-Effect-Induced Quantum Dotsen_US
dc.subject.otherPlanar-Resonant-Tunneling Field-Effect Transistors (PRESTFETs)en_US
dc.subject.otherSubmicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopyen_US
dc.subject.otherSubmicrometer-Period Gold Transmission Gratings for Atom-Beam Interferometryen_US
dc.subject.otherHigh-Dispersion, High-Efficiency Transmission Gratings for Astrophysical Spectroscopyen_US
dc.subject.otherEpitaxy via Surface-Energy-Driven Grain Growthen_US
dc.titleSubmicron Structures Technology and Researchen_US
dc.typeTechnical Reporten_US


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