| dc.contributor.author | Coleman, John W. | en_US |
| dc.date.accessioned | 2010-07-15T20:50:32Z | |
| dc.date.available | 2010-07-15T20:50:32Z | |
| dc.date.issued | 1979-01 | en_US |
| dc.identifier | RLE_PR_121_II | en_US |
| dc.identifier.uri | http://hdl.handle.net/1721.1/56723 | |
| dc.description | Contains report on one research project. | en_US |
| dc.description.sponsorship | Joint Services Electronics Program (Contract DAAG29-78-C-0020) | en_US |
| dc.description.sponsorship | National Institutes of Health (Grant 1 RO1 GM23597) | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) | en_US |
| dc.relation.ispartof | Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1979 | en_US |
| dc.relation.ispartof | General Physics | en_US |
| dc.relation.ispartof | Developmental Electron Optics Laboratory | en_US |
| dc.relation.ispartofseries | Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 121 | en_US |
| dc.rights | Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. | en_US |
| dc.subject.other | Developmental Electron Optics Laboratory | en_US |
| dc.subject.other | Ultrahigh-Sensitivity Electron Optical Determination | en_US |
| dc.subject.other | Location of Impurity Atoms in Si and GaAs | en_US |
| dc.title | Developmental Electron Optics Laboratory | en_US |
| dc.type | Technical Report | en_US |
