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dc.contributor.authorAbbott, P. C.en_US
dc.contributor.authorStickney, Robert E.en_US
dc.contributor.authorFranklin, J. E.en_US
dc.date.accessioned2010-07-01T16:52:41Z
dc.date.available2010-07-01T16:52:41Z
dc.date.issued1971-10-15en_US
dc.identifierRLE_QPR_103_IVen_US
dc.identifier.urihttp://hdl.handle.net/1721.1/56212
dc.descriptionContains reports on two research projects.en_US
dc.description.sponsorshipJoint Services Electronics Programs (U.S. Army, U. S. Navy, and U. S. Air Force) under Contract DAAB07-71-C-0300en_US
dc.description.sponsorshipNational Aeronautics and Space Administration (Grant NGR 22-009-091)en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Quarterly Progress Report, October 15, 1971en_US
dc.relation.ispartofGeneral Physicsen_US
dc.relation.ispartofPhysical Electronics and Surface Physicsen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Quarterly Progress Report, no. 103en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherPhysical Electronicsen_US
dc.subject.otherSurface Physicsen_US
dc.subject.otherQuasi-Equilibrium Analysis of the Reaction of Atomic and Molecular Fluorine with Tungstenen_US
dc.subject.otherCreep-Rupture Behavior of Doped Tungsten Wire at High Temperature (1600-2925° C)en_US
dc.titlePhysical Electronics and Surface Physicsen_US
dc.typeTechnical Reporten_US


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