SiGeC Near Infrared Photodetectors

dc.contributor.author	Li, Baojun
dc.contributor.author	Chua, Soo-Jin
dc.contributor.author	Fitzgerald, Eugene A.
dc.contributor.author	Leitz, Christopher W.
dc.contributor.author	Miao, Lingyun
dc.date.accessioned	2003-12-22T20:46:31Z
dc.date.available	2003-12-22T20:46:31Z
dc.date.issued	2002-01
dc.identifier.uri	http://hdl.handle.net/1721.1/3985
dc.description.abstract	A near infrared waveguide photodetector in Si-based ternary Si₁âˆ’xâˆ’yGexCy alloy was demonstrated for 0.85~1.06 µm wavelength fiber-optic interconnection system applications. Two sets of detectors with active absorption layer compositions of Si₀.₇₉Ge₀.₂C₀.₀₁ and Si₀.₇₀Ge₀.₂₈C₀.₀₂ were designed. The active absorption layer has a thickness of 120~450 nm. The external quantum efficiency can reach ~3% with a cut-off wavelength of around 1.2 µm.	en
dc.description.sponsorship	Singapore-MIT Alliance (SMA)	en
dc.format.extent	484917 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.relation.ispartofseries	Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject	photodetector	en
dc.subject	quantum efficiency	en
dc.subject	absorption coefficient	en
dc.subject	absorption efficiency	en
dc.subject	band gap	en
dc.subject	lattice constant	en
dc.subject	critical thickness	en
dc.subject	SiGeC	en
dc.subject	semiconductor	en
dc.subject	alloy	en
dc.title	SiGeC Near Infrared Photodetectors	en
dc.type	Article	en