Atomistic Simulations of Metallic Cluster Coalescence

dc.contributor.author	Takahashi, A. R.
dc.contributor.author	Thompson, Carl V.
dc.contributor.author	Carter, W. Craig
dc.date.accessioned	2003-12-20T19:00:27Z
dc.date.available	2003-12-20T19:00:27Z
dc.date.issued	2002-01
dc.identifier.uri	http://hdl.handle.net/1721.1/3968
dc.description.abstract	A new computational method is introduced to investigate the stresses developed in the island-coalescence stage of polycrystalline film formation during deposition. The method uses molecular dynamics to examine the behavior of clusters of atoms both in free space and on substrates. Continuum treatments used in previous models may not be applicable at small length scales or low dimensionality. In atomistic simulations, the effects of surface diffusion, bond straining and defect formation can be directly studied. TEM experiments will be used to evaluate the validity of the simulation model.	en
dc.description.sponsorship	Singapore-MIT Alliance (SMA)	en
dc.format.extent	43588 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.relation.ispartofseries	Advanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subject	modeling	en
dc.subject	simulation	en
dc.subject	stress	en
dc.subject	thin films	en
dc.title	Atomistic Simulations of Metallic Cluster Coalescence	en
dc.type	Article	en