InGaAsN/GaAs Quantum-well Laser Diodes

dc.contributor.author	Wang, S.Z.
dc.contributor.author	Yoon, Soon Fatt
dc.date.accessioned	2003-12-14T23:48:01Z
dc.date.available	2003-12-14T23:48:01Z
dc.date.issued	2004-01
dc.identifier.uri	http://hdl.handle.net/1721.1/3906
dc.description.abstract	GaAs-based InGaAsN/GaAs quantum well is found to be very sensitive to growth conditions and ex-situ annealing processes. Annealing could drastically increase the optical quality of GaAs-based InGaAsN/GaAs quantum well. As an end of this paper, some results on InGaAsN/GaAsN/AlGaAs laser diodes are also presented.	en
dc.description.sponsorship	Singapore-MIT Alliance (SMA)	en
dc.format.extent	293743 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en_US
dc.relation.ispartofseries	Innovation in Manufacturing Systems and Technology (IMST);
dc.subject	InGaAsN/GaAs	en
dc.subject	quantum well	en
dc.subject	molecular beam epitaxy	en
dc.subject	laser diode	en
dc.title	InGaAsN/GaAs Quantum-well Laser Diodes	en
dc.type	Article	en