| dc.contributor.author | Jin, Lijuan | |
| dc.contributor.author | Pey, Kin Leong | |
| dc.contributor.author | Choi, Wee Kiong | |
| dc.contributor.author | Fitzgerald, Eugene A. | |
| dc.contributor.author | Antoniadis, Dimitri A. | |
| dc.contributor.author | Pitera, Arthur J. | |
| dc.contributor.author | Lee, Minjoo L. | |
| dc.contributor.author | Chi, D.Z. | |
| dc.date.accessioned | 2003-11-24T20:54:41Z | |
| dc.date.available | 2003-11-24T20:54:41Z | |
| dc.date.issued | 2003-01 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/3724 | |
| dc.description.abstract | The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using in situ annealing at 400°C, Ni₃Ge₂ and NiGe were observed. For the interfacial reaction of Ni with relaxed Si₀.₇₅Ge₀.₂₅ films rapid thermal annealed at 400°C, a mixed layer consisting of Ni₃(Si₁â‚‹xGex)₂, Ni(Si₁â‚‹yGey), and Si₁â‚‹zGez (z>y>x) was formed; whereas only Ni₃(Si₁â‚‹xGex)₂ and Ni(Si₁â‚‹yGey>) were observed by in situ annealing. | en |
| dc.description.sponsorship | Singapore-MIT Alliance (SMA) | en |
| dc.format.extent | 1386604 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en_US | |
| dc.relation.ispartofseries | Advanced Materials for Micro- and Nano-Systems (AMMNS); | |
| dc.subject | Ni-germanosilicide | en |
| dc.subject | in situ annealing | en |
| dc.title | The interfacial reaction of Ni on (100) Si₁â‚‹xGex (x=0, 0.25) and (111) Ge | en |
| dc.type | Article | en |
