dc.contributor.author | Schmidt, Martin A. | en_US |
dc.contributor.author | O'Handley, Robert C., 1942- | en_US |
dc.contributor.author | Ruff, Susan | en_US |
dc.coverage.temporal | Fall 2003 | en_US |
dc.date.issued | 2003-12 | |
dc.identifier | 6.152J-Fall2003 | |
dc.identifier | local: 6.152J | |
dc.identifier | local: 3.155J | |
dc.identifier | local: IMSCP-MD5-beaf56117a9c987185ba38d080bf124a | |
dc.identifier.uri | http://hdl.handle.net/1721.1/36872 | |
dc.description.abstract | Introduces the theory and technology of integrated-circuit fabrication. Lectures and laboratory sessions on basic processing techniques such as diffusion, oxidation, epitaxy, photolithography, chemical vapor deposition, and plasma etching. Emphasis on the interrelationships between material properties, device structure, and the electrical behavior of devices. Provides background for thesis work in microelectronics or for 6.151. From the course home page: Course Description This course introduces the theory and technology of micro/nano fabrication. Lectures and laboratory sessions focus on basic processing techniques such as diffusion, oxidation, photolithography, chemical vapor deposition, and more. Through team lab assignments, students are expected to gain an understanding of these processing techniques, and how they are applied in concert to device fabrication. Students enrolled in this course have a unique opportunity to fashion and test micro/nano-devices, using modern techniques and technology. | en_US |
dc.language | en-US | en_US |
dc.rights.uri | Usage Restrictions: This site (c) Massachusetts Institute of Technology 2003. Content within individual courses is (c) by the individual authors unless otherwise noted. The Massachusetts Institute of Technology is providing this Work (as defined below) under the terms of this Creative Commons public license ("CCPL" or "license"). The Work is protected by copyright and/or other applicable law. Any use of the work other than as authorized under this license is prohibited. By exercising any of the rights to the Work provided here, You (as defined below) accept and agree to be bound by the terms of this license. The Licensor, the Massachusetts Institute of Technology, grants You the rights contained here in consideration of Your acceptance of such terms and conditions. | en_US |
dc.subject | microelectronics | en_US |
dc.subject | Microelectronics processing | en_US |
dc.subject | integrated circuits | en_US |
dc.subject | vacuum | en_US |
dc.subject | chemical vapor deposition | en_US |
dc.subject | CVD | en_US |
dc.subject | oxidation | en_US |
dc.subject | diffusion | en_US |
dc.subject | implantation | en_US |
dc.subject | lithography | en_US |
dc.subject | soft lithography | en_US |
dc.subject | etching | en_US |
dc.subject | sputtering | en_US |
dc.subject | evaporation | en_US |
dc.subject | interconnect | en_US |
dc.subject | metallization | en_US |
dc.subject | crystal growth | en_US |
dc.subject | reliability | en_US |
dc.subject | fabrication | en_US |
dc.subject | processing | en_US |
dc.subject | photolithography | en_US |
dc.subject | physical vapor deposition | en_US |
dc.subject | MOS | en_US |
dc.subject | MOS capacitor | en_US |
dc.subject | microcantilever | en_US |
dc.subject | microfluidic | en_US |
dc.subject | 6.152J | en_US |
dc.subject | 3.155J | en_US |
dc.subject | 6.152 | en_US |
dc.subject | 3.155 | en_US |
dc.title | 6.152J / 3.155J Microelectronics Processing Technology, Fall 2003 | en_US |
dc.title.alternative | Microelectronics Processing Technology | en_US |