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dc.contributor.authorLiew, K.P.
dc.contributor.authorLi, Yi
dc.contributor.authorYeadon, Mark
dc.contributor.authorBernstein, R.
dc.contributor.authorThompson, Carl V.
dc.date.accessioned2003-11-10T19:18:00Z
dc.date.available2003-11-10T19:18:00Z
dc.date.issued2003-01
dc.identifier.urihttp://hdl.handle.net/1721.1/3658
dc.description.abstractAn curvature measurement technique was used to characterize the stress evolution during reaction of a Ni film and a silicon substrate to form nickel silicide. Stress changes were measured at each stage of the silicide growth. When the nickel films were subjected to long-time isothermal annealing, stresses that developed during silicide formation gradually relaxed. Fitting the experimental results with a kinetic model provides insight into the volumetric strain and relaxation behavior of the reacting film and the reaction product.en
dc.description.sponsorshipSingapore-MIT Alliance (SMA)en
dc.format.extent379507 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.relation.ispartofseriesAdvanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subjectnickel silicideen
dc.subjectstress evolutionen
dc.subjectCoble creepen
dc.titleCharacterization and Modeling of Stress Evolution During Nickel Silicides Formationen
dc.typeArticleen


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